Memristive Crossbar Arrays for Storage and Computing Applications

The emergence of memristors with potential applications in data storage and artificial intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with data bits encoded by the resistance of individual cells. Despite the proposed high density and excellent scalability, the sneak‐path current causing cross interference impedes their practical applications. Therefore, developing novel architectures to mitigate sneak‐path current and improve efficiency, reliability, and stability may benefit next‐generation storage‐class memory (SCM). Moreover, conventional digital computers face the von‐Neumann bottleneck and the slowdown of transistors’ scaling, imposing a big challenge to hardware artificial intelligence. Memristive crossbar features colocation of memory and processing units, as well as superior scalability, making it a promising candidate for hardware accelerating machine learning and neuromorphic computing. Herein, first, crossbar architecture is introduced. Then, for storage, the origin of sneak‐path current is reviewed and techniques to mitigate this issue from the angle of materials and circuits are discussed. Computing wise, the applications of memristive crossbars in both machine learning and neuromorphic computing are surveyed, focusing on the structure of unit cells, the network topology, and the learning types. Finally, a perspective on future engineering and applications of memristive crossbars is discussed.

Authors

Huihan Li; Shaocong Wang; Xumeng Zhang; Wei Wang; Rui Yang; Zhong Sun; Wanxiang Feng; Peng Lin; Zhongrui Wang; Linfeng Sun; Yugui Yao

Published

Jul 1, 2021

Journal or venue

Advanced Intelligent Systems

DOI

10.1002/aisy.202100017

Paper type

journal article

Source

Openalex