Fengjiu Yang; Kai Zhu · 2024 · Advanced Materials
Paper
Abstract Organic–inorganic metal‐halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single‐junction PV devices, although lead (Pb)‐based perovskite solar cells have achieved 26.1% efficiency, the mixed tin‐lead (Sn‐Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn‐Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley–Queisser radiative limit for the single‐junction devices. The performance of the all‐perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state‐of‐the‐art mixed Sn‐Pb perovskites and their application in single‐junction and all‐perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn‐Pb perovskites in both efficiency and stability for PV applications.
Analysis
This review covers recent advancements in mixed tin-lead perovskites for both single-junction and all-perovskite tandem solar cells, highlighting their potential for exceeding single-junction efficiency limits.
Discovery
Constantin Bach; Dong Won Kim; Yitian Du; Yana Vaynzof; Carsten Deibel
Oussama Er-Riyahi; Dorota Biernacka; Yating Guo; Mikel Ballarena Tellechea; Silver-Hamill Turren-Cruz; Dario Bercioux; Meng Li; Agnieszka Lekawa-Raus; Jorge Pascual; Karolina Z. Milowska
Dilfuza Shukurova
Elisabetta Brivio; Luigi Vesce; Andrea Danelli; Sofia Spagnolo; Pierpaolo Girardi
Penglei Sun; Shuyan Chen; Xiang Liu; Longhan Zhang; Huajie You; Chang Yan; Yongqi Zhang; Xiaowen Chu; Tong-yi Zhang
Lai X; Zhang X; Jiang J; Zhao X; Lin Q; Hu G; Chen H; Zhang L; Zhang HM; Xin K; Wei W; Bian H; Wang H; Shen L
Source record