Silvia Arcangeli; Camilla Bove; Claudia Mezzanotte; Barbara Camisa; Laura Falcone; Francesco Manfredi; Eugenia Bezzecchi; Rita El Khoury; Rossana Norata; Francesca Sanvito; Maurilio Ponzoni; Beatrice Greco; Marta Angiola Moresco; Matteo G. Carrabba; Fabio Ciceri; Chiara Bonini; Attilio Bondanza; Monica Casucci · 2022 · Journal of Clinical Investigation
Paper
Chimeric antigen receptor (CAR) T cell expansion and persistence represent key factors to achieve complete responses and prevent relapses. These features are typical of early memory T cells, which can be highly enriched through optimized manufacturing protocols. Here, we investigated the efficacy and safety profiles of CAR T cell products generated from preselected naive/stem memory T cells (TN/SCM), as compared with unselected T cells (TBULK). Notwithstanding their reduced effector signature in vitro, limiting CAR TN/SCM doses showed superior antitumor activity and the unique ability to counteract leukemia rechallenge in hematopoietic stem/precursor cell-humanized mice, featuring increased expansion rates and persistence together with an ameliorated exhaustion and memory phenotype. Most relevantly, CAR TN/SCM proved to be intrinsically less prone to inducing severe cytokine release syndrome, independently of the costimulatory endodomain employed. This safer profile was associated with milder T cell activation, which translated into reduced monocyte activation and cytokine release. These data suggest that CAR TN/SCM are endowed with a wider therapeutic index compared with CAR TBULK.
Analysis
Manufacturing CAR T cells from naive/stem memory T cells improves antitumor activity and persistence while reducing cytokine release syndrome compared to unselected T cells.
Discovery
Ortiz-Bueno M; Millán-López A; Labun K; Benabdellah K
Wu T; Lv B; Wang H; He G; Fu Y; Ji X; Zeng Y; Ni D; Qiu J; Hua K
Dmitry Sinelshchikov; Nikols Amaru Mora Millán; Miguel Perales-Patón; Juan Belmonte-Beitia; Matteo Italia
Xudong Wang; Jin Zhang
Deividas Pažėraitis; J. Kupčinskas
Chaurasiya S; Kim SI; Sah P; Zhang Z; Vashi Y; Wu H; Cillis J; Park A; Yang A; Woo Y; Xiong G; Liu J; Zhang H; Wang P; Liu C; Fong Y
Source record